Selective growth of gallium nitride layers with a rectangular cross‐sectional shape and stimulated emission from the optical waveguides observed by photopumping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116117
Reference12 articles.
Cited by 53 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates;Nanoscale Research Letters;2017-02-23
2. Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure;Journal of Materials Science: Materials in Electronics;2016-05-14
3. High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy;Crystal Growth & Design;2016-02-15
4. The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET;Journal of Materials Science: Materials in Electronics;2015-09-07
5. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries;Journal of Applied Physics;2015-05-15
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