High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy

Published:2016-02-15 Issue:3 Volume:16 Page:1458-1462
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Hartmann Jana¹²,Steib Frederik¹²,Zhou Hao¹,Ledig Johannes¹²,Fündling Sönke¹²,Albrecht Friederike¹²,Schimpke Tilman³,Avramescu Adrian³,Varghese Tansen³,Wehmann Hergo-Heinrich¹²,Straßburg Martin³,Lugauer Hans-Jürgen³,Waag Andreas¹²

Affiliation:

1. Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, 38092 Braunschweig, Germany

2. epitaxy competence center ec2, Hans-Sommer-Strasse 66, 38106 Braunschweig, Germany

3. Osram Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

Funder

Deutsche Forschungsgemeinschaft

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link