Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mo stretchy="true">{</mml:mo><mml:mrow><mml:mn>10</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover><mml:mn>0</mml:mn></mml:mrow><mml:mo stretchy="true">}</mml:mo></mml:mrow></mml:math> plane of GaN nanorods-Reference-Cited by-同舟云学术

Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on {101‾0} plane of GaN nanorods

Published:2023-11 Issue: Volume:145 Page:114488
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Kulkarni Mandar A.^ORCID,Ryu Hyesu,Choi Hak-Jong,Abdullah Ameer,Thaalbi Hamza^ORCID,Tariq Fawad^ORCID,Lee Sang Hyun,Lim Hyungjun,Ryu Sang-Wan

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference43 articles.

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2. Compound semiconductors: physics, technology, and device concepts;Scholz;Compd. Semicond. Physics,2017

3. Recent advances and challenges in the MOCVD growth of indium gallium nitride: a brief review;Tan;Mater. Sci. Semicond. Process.,2022

4. Monolithic integration of multicolor InGaN LEDs with uniform luminescence emission;Liu;Opt Express,2021

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4. Investigation into the Effects of Cross-Sectional Shape and Size on the Light-Extraction Efficiency of GaN-Based Blue Nanorod Light-Emitting Diode Structures;Crystals;2024-02-29