Fabrication and properties of etched GaN nanorods-Reference-Cited by-同舟云学术

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Fabrication and properties of etched GaN nanorods

Published:2011-11-21 Issue:3-4 Volume:9 Page:631-634
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Shields Philip,Hugues Maxime,Zúñiga-Pérez Jesus,Cooke Mike,Dineen Mark,Wang Wang,Causa Federica,Allsopp Duncan

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preferential crystal orientation etching of GaN nanopillars in Cl2 plasma;Materials Science in Semiconductor Processing;2023-10

2. Role of Temperature in Arsenic-Induced Antisurfactant Growth of GaN Microrods;ACS Omega;2022-07-05

3. Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching;Journal of Vacuum Science & Technology A;2021-09

4. Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods;Nanomaterials;2020-12-20

5. Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma;Materials Research Letters;2020-11-24

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