Optical and electrical properties of Be doped GaN bulk crystals-Reference-Cited by-同舟云学术

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Optical and electrical properties of Be doped GaN bulk crystals

Published:2001-09 Issue:3-4 Volume:230 Page:368-371
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Suski T.,Litwin-Staszewska E.,Perlin P.,Wisniewski P.,Teisseyre H.,Grzegory I.,Bockowski M.,Porowski S.,Saarinen K.,Nissilä J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Theoretical evidence for efficient p-type doping of GaN using beryllium

2. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

3. Electrical Properties of GaN Bulk Single Crystals Doped with Mg

4. Chemical trends for acceptor impurities in GaN

5. Atomic geometry and electronic structure of native defects in GaN

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN;Solids;2024-01-04

2. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27

3. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices;Journal of Applied Physics;2020-06-07

4. Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN;Journal of Applied Physics;2018-08-21

5. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

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