Electrical Properties of GaN Bulk Single Crystals Doped with Mg-Reference-Cited by-同舟云学术

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Electrical Properties of GaN Bulk Single Crystals Doped with Mg

Published:1999-11 Issue:1 Volume:216 Page:567-570
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Litwin-Staszewska E.,Suski T.,Grzegory I.,Porowski S.,Perlin P.,Robert J.L.,Contreras S.,Wasik D.,Witowski A.,Cote D.,Clerjaud B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method;Optical Materials;2016-08

2. Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers;Journal of Physics D: Applied Physics;2010-02-02

3. Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes;Applied Physics Letters;2007-03-05

4. Properties of III–V Nitrides Substrates and Homoepitaxial Layers;Optoelectronic Devices: III Nitrides;2005

5. Atomic structure of pyramidal defects in Mg-doped GaN;Physical Review B;2003-12-31

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