Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN
Author:
Affiliation:
1. Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294, USA
2. Institute for High Pressure Physics, Polish Academy of Sciences, Sokolowska, 29/37, 01-142 Warsaw, Poland
Funder
Division of Materials Research
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5037598
Reference23 articles.
1. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
2. Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes
3. Vertical Power p-n Diodes Based on Bulk GaN
4. High nitrogen pressure solution growth of GaN
5. Computationally predicted energies and properties of defects in GaN
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