Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs
Author:
Affiliation:
1. Université Grenoble Alpes, CEA, LETI,Grenoble,France,F-38000
2. STMicroelectronics,Research and Development Department,Catania,Italy,95121
3. STMicroelectronics,Research and Development Department,Tours,France,37100
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117813.pdf?arnumber=10117813
Reference14 articles.
1. Role of free holes in nBTI degradation in GaN-on-Si MOS-channel HEMTs
2. Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN
3. Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations
4. The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors
5. Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN
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1. Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture;IEEE Transactions on Electron Devices;2024-05
2. Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress;Microelectronics Reliability;2023-11
3. Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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