Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
Author:
Affiliation:
1. CEA, Leti, University Grenoble-Alpes, Grenoble, France
Funder
PSPC French national program “G-Mobility.”
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10508280/10505816.pdf?arnumber=10505816
Reference18 articles.
1. GaN-based power devices: Physics, reliability, and perspectives
2. Power GaN Devices
3. An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
4. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
5. An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
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