Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain-Reference-Cited by-同舟云学术

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Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Kaneko Saichiro,Kuroda Masayuki,Yanagihara Manabu,Ikoshi Ayanori,Okita Hideyuki,Morita Tatsuo,Tanaka Kenichiro,Hikita Masahiro,Uemoto Yasuhiro,Takahashi Satoru,Ueda Tetsuzo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123384.pdf?arnumber=7123384

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1. Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors;IEEE Transactions on Power Electronics;2024-09

2. Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform;IEEE Transactions on Electron Devices;2024-08

3. Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance;IEEE Electron Device Letters;2024-06

4. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

5. Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation;IEEE Electron Device Letters;2024-05

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