Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy
2. Low-temperature growth and its growth mechanisms of 3C-SiC crystal by gas source molecular beam epitaxial method
3. Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy
4. Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC
5. Surface structure of 3C–SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study
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