Surface structure of 3C–SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study-Reference-Cited by-同舟云学术

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Surface structure of 3C–SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study

Published:1996-03-01 Issue:2 Volume:14 Page:938
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hu C.-W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15

2. Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2007-01-31

3. A density functional theory study of the atomic and electronic structures of 3C-SiC()-()-R30° surface reconstruction;Surface Science;2002-03

4. Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells;Journal of Crystal Growth;2002-01

5. An atomic structural model of ()-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor;Surface Science;2001-03

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