Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications
Author:
Funder
Council of Scientific and Industrial Research, India
Publisher
Elsevier BV
Subject
General Medicine
Reference25 articles.
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4. First-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: Chemical trends versus experimental data;Polak;Semicond. Sci. Technol.,2015
5. I. Mal, D.P. Samajdar, Investigation of the Optoelectronic Properties of InSbNBi with 16-Band k Dot p Model, (2021) 245–251. doi:10.1007/978-981-16-1570-2_23.
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1. Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors;Advanced Functional Materials;2024-08-26
2. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024
3. A potential optical sensor based on nanostructured silicon;Journal of Materials Science: Materials in Electronics;2023-03
4. Characteristics Analysis of Leakage Current in an Array of InSb Photodetector: The Effect of Compressive and Tensile Stresses;physica status solidi (b);2023-01-05
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