Auger losses in dilute InAsBi-Reference-Cited by-同舟云学术

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Auger losses in dilute InAsBi

Published:2018-05-07 Issue:19 Volume:112 Page:192106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hader J.¹^ORCID,Badescu S. C.²^ORCID,Bannow L. C.³^ORCID,Moloney J. V.¹,Johnson S. R.⁴,Koch S. W.³^ORCID

Affiliation:

1. Nonlinear Control Strategies Inc., Tucson, Arizona 85704, USA

2. Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA

3. Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany

4. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Funder

U.S. Air Force

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5022775

Reference33 articles.

1. Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi

2. Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi

3. Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

4. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

5. Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The properties of the valence band maximum in the as-rich InBixAs1-x alloy;Solid State Communications;2023-09

2. Intrinsic carrier losses in tellurium due to radiative and Auger recombinations;Applied Physics Letters;2022-11-07

3. The structure and electronic properties of InBixAs1-x alloy (0 ≤ x < 0.1) predicted by first-principles calculations;Infrared Physics & Technology;2022-11

4. Investigation of optoelectronic and thermoelectric properties of InAsBi for LWIR applications: A first principles and k dot p study;Materials Science in Semiconductor Processing;2022-01

5. Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications;Materials Today: Proceedings;2022

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