Investigation of the Optoelectronic Properties of InSbNBi with 16-Band k Dot p Model
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Springer Singapore
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https://link.springer.com/content/pdf/10.1007/978-981-16-1570-2_23
Reference11 articles.
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2. Alberi, K., Wu, J., Walukiewicz, W., Yu, K.M., Dubon, O.D., Watkins, S.P., Wang, C.X., Liu, X., Cho, Y.J., Furdyna, J.: Valence-band anticrossing in mismatched III-V semiconductor alloys. Phys. Rev. B Condens. Matter Mater. Phys. 75, 1–6 (2007). https://doi.org/10.1103/PhysRevB.75.045203
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5. Mal, I., Panda, D.P., Tongbram, B., Samajdar, D.P., Chakrabarti, S.: Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots. J. Appl. Phys. 124, 145701 (2018). https://doi.org/10.1063/1.5047026
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