Estimation of Bi induced changes in the direct E0 band gap of III–V-Bi alloys and comparison with experimental data-Reference-Cited by-同舟云学术

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Estimation of Bi induced changes in the direct E0 band gap of III–V-Bi alloys and comparison with experimental data

Published:2016-03 Issue: Volume:484 Page:27-30
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Samajdar D.P.,Dhar S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Valence-band anticrossing in mismatched III-V semiconductor alloys

2. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

3. Band gap of GaAs1−xBix, 0

4. Valence band anticrossing in GaBixAs1−x

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1. Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study;Russian Journal of Physical Chemistry B;2023-08

2. Impacts of growth conditions on InAlBiAs electrical properties and morphology;Journal of Vacuum Science & Technology A;2022-07

3. Investigation of optoelectronic and thermoelectric properties of InAsBi for LWIR applications: A first principles and k dot p study;Materials Science in Semiconductor Processing;2022-01

4. Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications;Materials Today: Proceedings;2022

5. Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range;Materials Science in Semiconductor Processing;2021-04

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