Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition-Reference-Cited by-同舟云学术

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Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition

Published:1996-05 Issue:1-2 Volume:278 Page:22-27
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ferro G.,Monteil Y.,Vincent H.,Cauwet F.,Bouix J.,Durupt P.,Olivier J.,Bisaro R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

2. Amorphous and Crystalline Silicon Carbide;Ikoma,1992

3. Epitaxial Growth and Characterization of β ‐ SiC Thin Films

4. Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon

5. Thickness Determination of SiC ‐ on ‐ Si Thin Films by Anisotropic Reactive Ion Etching and Preferential Wet Etching

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1. Characterization of Very Thin 3C-SiC Epilayers on Si;Materials Science Forum;2024-08-21

2. 3C-SiC grown on Si by using a Si1-xGex buffer layer;Journal of Crystal Growth;2019-08

3. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05

4. Carbonization and transition layer effects on 3C-SiC film residual stress;Journal of Crystal Growth;2017-09

5. Bibliography;Silicon Carbide One-Dimensional Nanostructures;2015-02-27

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