Affiliation:
1. NOVASiC
2. Université Côte d’Azur
Abstract
We verify experimentally to what extent the intensity of 3C-SiC TO peak in infrared reflectance spectrum can be used to estimate the thickness of extremely thin 3C-SiC epilayers on Si. The influence of several Si substrate characteristics (orientation, doping level, back-side surface preparation) on the peak calibration is discussed.
Publisher
Trans Tech Publications, Ltd.