Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Growth and Characterization of Cubic SiC Single‐Crystal Films on Si
3. Proceedings in Physics, Vol. 34, Amorphous and Crystalline Silicon Carbide;Powell,1989
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