Kinetics of Ni/a-Ge bilayer reactions-Reference-Cited by-同舟云学术

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Kinetics of Ni/a-Ge bilayer reactions

Published:1994-12 Issue:1-2 Volume:253 Page:456-461
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Patterson J.Ken,Park B.J.,Ritley K.,Xiao H.Z.,Allen L.H.,Rockett A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Investigation of the AuGeNi system used for alloyed contacts to GaAs

2. A study of Ni‐Ge interdiffusion on GaAs using rapid thermal annealing with temperature standards

3. Interfacial reaction between a Ni/Ge bilayer and silicon (100)

4. MRS SSR Conf. Proc.;Wang,1992

5. Schottky barrier heights of W on Si1−xGexalloys

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1. Impact and behavior of Sn during the Ni/GeSn solid-state reaction;Journal of Applied Crystallography;2020-04-14

2. Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing;Nanomaterials;2020-03-31

3. Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two;Advanced Material and Device Applications with Germanium;2018-10-03

4. Inter-Diffusion of Nickel and Palladium with Germanium;Intermetallic Compounds - Formation and Applications;2018-05-30

5. Metal germanides for practical on-chip plasmonics in the mid infrared;Optical Materials Express;2018-03-21

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