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Investigation of the AuGeNi system used for alloyed contacts to GaAs

  • Published:1977-05 Issue:5 Volume:20 Page:433-439
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Wittmer M.,Pretorius R.,Mayer J.W.,Nicolet M-A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 70 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contact Problems in GaAs-based Solar Cells;Acta Polytechnica Hungarica;2018

2. Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions;Applied Physics Letters;2007-01-15

3. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000

4. The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures;Journal of Materials Research;1999-04

5. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09
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