Schottky barrier heights of W on Si1−xGexalloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110468
Reference17 articles.
1. Reaction of titanium with germanium and silicon‐germanium alloys
2. Compound formation at the interaction of Pd with strained layers of Si1−xGexepitaxially grown on Si(100)
3. Compound formation at the interaction of Pd with strained layers of Si1−xGexepitaxially grown on Si(100)
4. Reduction of the Barrier Height of Silicide/p-Si1-xGexContact for Application in an Infrared Image Sensor
5. Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−xGexalloys
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2. Strain and Defect Evolution of Si1-xGex/Si Heterostructures Grown by Pulsed Laser Induced Epitaxy;Surfaces and Interfaces;2022-08
3. TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe;IEEE Transactions on Electron Devices;2017-02
4. Rectifying and Schottky characteristics of a-SixGe1−xOy with metal contacts;Canadian Journal of Physics;2014-07
5. Platinum Germanosilicide Contacts Formed on Strained and Relaxed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Layers;IEEE Transactions on Electron Devices;2009-06
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