Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics
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Published:2024-06
Issue:
Volume:176
Page:108314
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Mamor MohammedORCID,
Bouziane Khalid,
Chakir Hind,
Ruterana Pierre