Author:
Quintero Andrea,Gergaud Patrice,Hartmann Jean-Michel,Delaye Vincent,Reboud Vincent,Cassan Eric,Rodriguez Philippe
Abstract
Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.
Funder
Agence Nationale de la Recherche
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Cited by
12 articles.
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