Optical properties of InP/InAlAs/InP grown by MOCVD on (100) substrates: influence of V/III molar ratio
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference16 articles.
1. Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
2. Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition
3. GaInAs‐AlInAs structures grown by molecular beam epitaxy
4. Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular‐beam expitaxy
5. Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction
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1. Influence of Indium Composition on InAlAs QCLs;2024-07-25
2. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP;Acta Physica Sinica;2024
3. Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures;Perovskite and Piezoelectric Materials;2021-01-27
4. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29
5. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24
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