Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction-Reference-Cited by-同舟云学术

Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction

Published:1987-04-15 Issue:8 Volume:61 Page:2856-2860
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Berger Paul R.,Bhattacharya Pallab K.,Singh Jasprit

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.337880

Reference9 articles.

1. Damped oscillations in reflection high energy electron diffraction during GaAs MBE

2. Dynamic RHEED observations of the MBE growth of GaAs

3. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

4. Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study

5. Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy

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