Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular‐beam expitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338859
Reference15 articles.
1. High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxy
2. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
3. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
4. Direct energy gap of Al1−xInxAs lattice matched to InP
5. The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy
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1. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers;Materials;2019-05-17
2. Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates;Applied Physics A;2019-01-29
3. Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission;Applied Physics Letters;2018-05-14
4. Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy;Semiconductor Science and Technology;2017-08-16
5. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
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