Formation of Br-terminated Si6 rings during etching of Si(111)-7 × 7
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-( 2×1) by Chlorine
2. Layer-by-layer etching of Si(100)-2×1 withBr2: A scanning-tunneling-microscopy study
3. Temperature-dependent surface morphologies for Br-etched Si(100)-2×1
4. Br2andCl2adsorption and etching of GaAs(110) studied by use of scanning tunneling microscopy
5. Pattern of Si(100): Spontaneous etching withBr2
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1. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008
2. Isothermal desorption process of Cl-covered Si(111) studied by surface differential reflectivity spectroscopy;Surface Science;2003-03
3. Thermal Desorption Process of Bromide on Si(111) Studied by Highly Sensitive Mass Spectroscopy;Japanese Journal of Applied Physics;2003-02-15
4. Origin of X-ray photon stimulated desorption of Cl+ and Cl2+ ions from Cl/Si(111)-(1×1);Surface Science;2002-06
5. Role of dimer stacking-fault structures in Si(111) growth and etching;Surface Science;1997-08
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