Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-( 2×1) by Chlorine
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.2014/fulltext
Reference14 articles.
1. Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)
2. Semiconductor surface etching by halogens: Fundamental steps
3. Chlorine bonding sites and bonding configurations on Si(100)–(2×1)
4. Ion‐assisted etching of silicon by molecular chlorine
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2. Phase discrimination of iron-silicides on Si(001) surfaces by three-dimensional reciprocal-lattice mapping;Surface Science;2010-01
3. Atomic processes during Cl supersaturation etching ofSi(100)−(2×1);Physical Review B;2009-03-06
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