Role of dimer stacking-fault structures in Si(111) growth and etching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Model for the energetics of Si and Ge (111) surfaces
3. Scanning-tunneling-microscopy study of the Si(111)-7×7 rest-atom layer following adatom removal by reaction with Cl
4. Identification of the Products from the Reaction of Chlorine with the Silicon(111)-(7×7) Surface
5. Equivalent Step Structures along Inequivalent Crystallographic Directions on Halogen-Terminated Si(111)-(1×1)Surfaces
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1. Decoration of domain boundaries: group IV elements and IV–IV compounds: Si(111) (decoration by molecules);Physics of Solid Surfaces;2018
2. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates;Thin Solid Films;2008-06
3. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008
4. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13
5. Transformation of Hydrogel-Based Inverse Opal Photonic Sensors from FCC to L11 during Swelling;The Journal of Physical Chemistry B;2006-09-02
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