Growth mode of Bi and Sb layers on GaAs(110) and InP(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1 × 1)-Sb (1 ML)
2. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
3. Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy
4. Characterization of UHV prepared Sb overlayers on (110) surfaces of III–V semiconductors
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4. Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-10
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