Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1 × 1)-Sb (1 ML)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
2. Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and Bonding
3. Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure
4. The adsorption of Ga and Sb on cleaved InP surfaces
5. R.H. Williams, private communications.
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1. In-P-Sb (Indium-Phosphorus-Antimony);Non-Ferrous Metal Systems. Part 1;2006
2. Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces;Physical Review B;2001-12-27
3. Adsorption of group-V elements on III–V (1 1 0) surfaces;Surface Science Reports;1996-11
4. Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel;Applied Surface Science;1996-09
5. Antimony adsorption on III–V(110) surfaces: Growth and structure studied by photoemission and photoelectron diffraction;Journal of Electron Spectroscopy and Related Phenomena;1996-05
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