Atomistic picture of interfacial mixing in the Si/Ge heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Silicon/germanium strained layer superlattices
2. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
3. Surfactants in epitaxial growth
4. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
5. Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy
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1. Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations;Journal of Raman Spectroscopy;2022-02-21
2. The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy;Semiconductor Science and Technology;2020-03-05
3. Strain engineered segregation regimes for the fabrication of thin Si1−xGex layers with abrupt n-type doping;Journal of Applied Physics;2010-02
4. Segregation in SiGe clusters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-01
5. Molecular dynamics simulation of Ge surface segregation;Thin Solid Films;2004-10
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