Molecular dynamics simulation of Ge surface segregation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices
2. Electroluminescence at room temperature of a SinGemstrained‐layer superlattice
3. Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy
4. Near and mid infrared silicon/germanium based photodetection
5. Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal conductivity of silicon using reverse non-equilibrium molecular dynamics;Journal of Applied Physics;2018-05-28
2. Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor;AIP Conference Proceedings;2016
3. SiH4 adsorption on SiGe(001);Surface Science;2007-02
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