Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces-Reference-Cited by-同舟云学术

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Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces

Published:1992-05 Issue: Volume:269-270 Page:797-803
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Resch U.,Esser N.,Raptis Y.S.,Richter W.,Wasserfall J.,Förster A.,Westwood D.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer

2. Molecular‐beam‐epitaxy GaAs regrowth with clean interfaces by arsenic passivation

3. Auger electron spectroscopy sputter depth profiles on AlxGa1−xAs protected by As and GaAs ultrathin layers

4. Vibrational excitations ofAs2O3. II. Crystalline phases

5. Raman scattering properties of amorphous As and Sb

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3. Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition;Applied Physics Letters;2018-08-27

4. Measuring Surface Energies of GaAs (100) and Si (100) by Three Liquid Contact Angle Analysis (3LCAA) for Heterogeneous Nano-BondingTM;MRS Advances;2018-07-10

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