Molecular‐beam‐epitaxy GaAs regrowth with clean interfaces by arsenic passivation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334425
Reference14 articles.
1. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
2. Carrier compensation at interfaces formed by molecular beam epitaxy
3. Tellurium coating of PbTe surfaces
4. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer
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