Carrier compensation at interfaces formed by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331534
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1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
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3. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
4. Ohmic Contacts to Solution‐Grown Gallium Arsenide
5. Removal of the high‐resistivity layer at thenonn+liquid phase epitaxial GaAs layer‐substrate interface by controlledinsituetch‐back
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