Removal of the high‐resistivity layer at thenonn+liquid phase epitaxial GaAs layer‐substrate interface by controlledinsituetch‐back
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327596
Reference29 articles.
1. Occurrence of non-ohmic contacts to Gunn diodes by liquid epitaxy
2. Ohmic Contacts to Solution‐Grown Gallium Arsenide
3. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
4. Influence of heat-treatment on the morphological and electrical properties of the GaAs epilayer-substrate interface
5. Effect of Nonuniform Conductivity on the Behavior of Gunn Effect Samples
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Antimony passivation of molecular‐beam epitaxially grown GaAs surfaces;Journal of Applied Physics;1988-03
2. The effect of surface preparation on the production of low interfacial charge regrown interfaces;Journal of Crystal Growth;1986-09
3. Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1986-08-20
4. Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE;Japanese Journal of Applied Physics;1986-01-20
5. Carrier compensation at interfaces formed by molecular beam epitaxy;Journal of Applied Physics;1982-09
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