The effect of surface preparation on the production of low interfacial charge regrown interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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2. Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
3. Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs which Contain High‐Resistivity Regions
4. Carrier compensation at interfaces formed by molecular beam epitaxy
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