Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition-Reference-Cited by-同舟云学术

Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition

Published:2018-08-27 Issue:9 Volume:113 Page:092103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Harrington S. D.¹^ORCID,Logan J. A.¹^ORCID,Chatterjee S.²,Patel S. J.¹^ORCID,Rice A. D.¹^ORCID,Feldman M. M.³,Polley C. M.⁴,Balasubramanian T.⁴,Mikkelsen A.⁵,Palmstrøm C. J.¹²^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

3. Physics Department, University of California, Santa Barbara, California 93106, USA

4. MAX IV Laboratory, Lund University, Lund 221 00, Sweden

5. Department of Physics and NanoLund, Lund University, Lund 221 00, Sweden

Funder

National Science Foundation

U.S. Department of Energy

Office of Naval Research Global

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5030553

Reference28 articles.

1. Covalent bonding and the nature of band gaps in some half-Heusler compounds

2. Half-metallic ferromagnets: From band structure to many-body effects

3. Recent progress of half-Heusler for moderate temperature thermoelectric applications

4. Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena

5. Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

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