Adsorption of hydrogen and disilane on Si(100) and SiGe surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference29 articles.
1. Low Temperature Silicon Epitaxy Using Si2 H 6
2. Gas source silicon molecular beam epitaxy using disilane
3. Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy
4. Kinetics of silicon epitaxy using SiH4in a rapid thermal chemical vapor deposition reactor
5. Decomposition of silane on Si(111)‐(7×7) and Si(100)‐(2×1) surfaces below 500 °C
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1. Electron-enhanced atomic layer deposition of silicon thin films at room temperature;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-01
2. Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy;Technical Physics;2017-03
3. Stress Evolution during Si(111)7×7 Surface Reconstruction;Hyomen Kagaku;2016
4. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
5. Direct stress measurement of Si(111) 7×7 reconstruction;Journal of Crystal Growth;2013-09
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