III-Nitride millimeter wave transistors
Author:
Publisher
Elsevier
Reference72 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,1999
2. Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability;Ando,2005
3. Surface passivation effects on AlGaNÕGaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride;Arulkumaran;Appl. Phys. Lett.,2004
4. Short-channel effects in subquarter-micrometer-gate HEMT’s: simulation and experiment;Awano;IEEE Trans. Electron Devices,1989
5. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors;Bajaj;Appl. Phys. Lett.,2015
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High Frequency Devices for Next Generation High-Capacity and High Speed Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01
2. Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN;Journal of Manufacturing Processes;2022-01
3. Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C;Solid-State Electronics;2021-11
4. In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors;physica status solidi (a);2021-10-14
5. The Evolution of Manufacturing Technology for GaN Electronic Devices;Micromachines;2021-06-23
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3