III-Nitride ultra-wide-bandgap electronic devices-Reference-Cited by-同舟云学术

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III-Nitride ultra-wide-bandgap electronic devices

Published:2019 Issue: Volume: Page:397-416
ISSN:0080-8784
Container-title:III-Nitride Electronic Devices
language:
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Author:

Kaplar Robert J.,Allerman Andrew A.,Armstrong Andrew M.,Baca Albert G.,Crawford Mary H.,Dickerson Jeramy R.,Douglas Erica A.,Fischer Arthur J.,Klein Brianna A.,Reza Shahed

Publisher

Elsevier

Reference51 articles.

1. Al0.3Ga0.7N PN diode with breakdown voltage > 1600 V;Allerman;Elec. Lett.,2016

2. The 2018 GaN power electronics roadmap;Amano;J. Phys. D.,2018

3. Ultra-wide-bandgap AlGaN polarization-doped field-effect transistor;Armstrong;Jpn. J. Appl. Phys.,2018

4. AlGaN polarization-doped field-effect transistor with compositionally-graded channel from Al0.6Ga0.4N to AlN;Armstrong;Appl. Phys. Lett.,2019

5. An AlN/Al0.85Ga0.15N high electron mobility transistor;Baca;Appl. Phys. Lett.,2016

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors;physica status solidi (b);2024-04-15

2. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14

3. Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration;AIP Advances;2021-09-01

4. Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes;Journal of Electronic Materials;2021-04-15

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