Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration-Reference-Cited by-同舟云学术

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Published:2021-09-01 Issue:9 Volume:11 Page:095119
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Almogbel Abdullah S.¹²^ORCID,Zollner Christian J.¹^ORCID,Saifaddin Burhan K.²^ORCID,Iza Michael¹,Wang Jianfeng¹,Yao Yifan¹,Wang Michael¹,Foronda Humberto¹^ORCID,Prozheev Igor³^ORCID,Tuomisto Filip³⁴^ORCID,Albadri Abdulrahman²,Nakamura Shuji¹⁵,DenBaars Steven P.¹⁵^ORCID,Speck James S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia

3. Department of Physics and Helsinki Institute of Physics, University of Helsinki, 00014 Helsinki, Finland

4. Department of Applied Physics, Aalto University, 02150 Espoo, Finland

5. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

National Science Foundation

Academy of Finland

King Abdulaziz City for Science and Technology

King Abdullah University of Science and Technology

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0066652

Reference81 articles.

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