Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?-Reference-Cited by-同舟云学术

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Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?

Published:2014-01 Issue: Volume:120 Page:436-440
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Veith Boris,Ohrdes Tobias,Werner Florian,Brendel Rolf,Altermatt Pietro P.,Harder Nils-Peter,Schmidt Jan

Funder

State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Solar Energy Materials and Solar Cells,2006

2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3;Hoex;Applied Physics Letters,2006

3. Silicon surface passivation by atomic layer deposited Al2O3;Hoex;Journal of Applied Physics,2008

4. Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition;Dingemans;Journal of Applied Physics,2011

5. Assessment of the illumination dependency of Al2O3 and SiO2 rear-passivated p-type silicon solar cells;Vermang;Physica Status Solidi RRL,2012

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2. Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon;Journal of Applied Physics;2024-08-07

3. Understanding the Strong Apparent Injection Dependence of Carrier Lifetimes in Doped Polycrystalline Silicon Passivated Wafers;Solar RRL;2024-05-28

4. Optimization of a Solution-Processed TiO_x/(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments;ACS Applied Materials & Interfaces;2024-03-19

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