Assessment of the illumination dependency of Al2 O3 and SiO2 rear-passivated p-type silicon solar cells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201206154/fullpdf
Reference23 articles.
1. Low‐Temperature Surface Passivation of Silicon for Solar Cells
2. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
3. Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum
4. Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation
5. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
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1. Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation;Nanomaterials;2021-07-12
2. Assisted passivation by a chemically grown SiO2 layer for p-type selective emitter-passivated emitter and rear cells;Solar Energy Materials and Solar Cells;2018-11
3. The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions;Journal of Applied Physics;2015-02-28
4. Resistive Power Loss Analysis of PV Modules Made From Halved 15.6 × 15.6 cm2 Silicon PERC Solar Cells With Efficiencies up to 20.0%;IEEE Journal of Photovoltaics;2015-01
5. Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?;Solar Energy Materials and Solar Cells;2014-01
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