Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition-Reference-Cited by-同舟云学术

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Published:2011-11 Issue:9 Volume:110 Page:093715
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dingemans G.,Terlinden N. M.,Verheijen M. A.,van de Sanden M. C. M.,Kessels W. M. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3658246

Reference41 articles.

1. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

2. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

3. Silicon surface passivation by atomic layer deposited Al2O3

4. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

5. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

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