Mechanical property effects of Si1−xGex channel and stressed contact etching stop layer on nano-scaled n-type metal–oxide–semiconductor field effect transistors-Reference-Cited by-同舟云学术

Mechanical property effects of Si1−xGex channel and stressed contact etching stop layer on nano-scaled n-type metal–oxide–semiconductor field effect transistors

Published:2014-04 Issue: Volume:557 Page:316-322
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Chang-Chun,Cheng Hsien-Chie,Hsu Hung-Wen,Chen Zih-Han,Teng Hsiao-Hsuan,Liu Chuan-Hsi

Funder

Chung Yuan Christian University

National Center for High-performance Computing

National Science Council of Taiwan, R.O.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. IEEE Electron Devices Meeting;Weber,2007

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

4. Strained Si CMOS (SS CMOS) technology: opportunities and challenges

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