Strain mapping in a nanoscale-triangular SiGe pattern by dark-field electron holography with medium magnification mode-Reference-Cited by-同舟云学术

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Strain mapping in a nanoscale-triangular SiGe pattern by dark-field electron holography with medium magnification mode

Published:2016-09-08 Issue:6 Volume:65 Page:499-507
ISSN:2050-5698
Container-title:Microscopy
language:en
Short-container-title:Microscopy (Tokyo)

Author:

Hoang Van Vuong,Cho Youngji,Yoo Jung Ho,Hong Soon-Ku,Choi Yong Ho,Choi Sungha,Jung Wooduck,Jeong Chang Kyu,Yang Jun-Mo

Publisher

Oxford University Press (OUP)

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Structural Biology

Link

http://academic.oup.com/jmicro/article-pdf/65/6/499/8325211/dfw036.pdf

Reference33 articles.

1. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

2. Strain mapping in MOSFETS by high-resolution electron holography;Hue;Mat. Sci. Eng. B,2008

3. Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

5. 2D strain measurement in sub-10 nm SiGe layer with dark-field electron holography

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical nanoscale strain-induced electronic localization in epitaxial La2/3Sr1/3MnO3 films with ZrO2 nanopillar inclusions;Nano Convergence;2023-07-28

2. Strain analysis of a Ge micro disk using precession electron diffraction;Journal of Applied Physics;2019-12-21

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