Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model-Reference-Cited by-同舟云学术

Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model

Published:2017-07-19 Issue:12 Volume:139 Page:
ISSN:0022-1481
Container-title:Journal of Heat Transfer
language:en
Short-container-title:

Author:

Echouchene Fraj¹,Belmabrouk Hafedh²

Affiliation:

1. Laboratory of Electronics and Microelectronics, University of Monastir, Monastir 5019, Tunisia e-mail:

2. Department of Physics, College of Science AlZulfi, Majmaah University, Al-Majma'ah 15341, Saudi Arabia e-mail:

Abstract

This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lagging (DPL) heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field effect transistor (MOSFET). The transient DPL model is solved using finite element method. Also, the influences of the governing parameters on global entropy generation for the following cases—(I) constant applied temperature, (II) temperature-jump boundary condition, and (III) a realistic MOSFET with volumetric heat source and adiabatic boundaries—are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization within a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.

Publisher

ASME International

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://asmedigitalcollection.asme.org/heattransfer/article-pdf/doi/10.1115/1.4037061/6216814/ht_139_12_122007.pdf

Reference42 articles.

1. An Analytical MOSFET Breakdown Model Including Self-Heating Effect;Solid-State Electron.,2000

2. New Insight on Negative Bias Temperature Instability Degradation With Drain Bias of 28 nm High-K Metal Gate p-MOSFET Devices;Microelectron. Reliab.,2014

3. A Numerical Study of Ballistic Transport in a Nanoscale MOSFET;Solid-State Electron.,2002

4. Steady-State and Dynamic Thermal Models for Heat Flow Analysis of Silicon-on-Insulator MOSFETs;Microelectron. Reliab.,2004

5. Investigation of a New Modified Source/Drain for Diminished Self-Heating Effects in Nanoscale MOSFETs Using Computer Simulation;Physica E,2006

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